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1

GaN and digital electronics: A way out of Moore's law?

Tomás Palacios, Jinwook W. Chung, Omair Saadat, Frederic Mieville

Journal:

physica status solidi (c)

Year:

2009

Language:

english

File:

PDF, 354 KB

english, 2009

2

High-Performance Integrated Dual-Gate AlGaN/GaN Enhancement-Mode Transistor

Lu, Bin, Saadat, Omair Irfan, Palacios, TomÃ¡s

Journal:

IEEE Electron Device Letters

Year:

2010

Language:

english

File:

PDF, 241 KB

english, 2010

3

Total-Ionizing-Dose Radiation Effects in AlGaN/GaN HEMTs and MOS-HEMTs

Sun, Xiao, Saadat, Omair I., Chen, Jin, Zhang, En Xia, Cui, Sharon, Palacios, Tomas, Fleetwood, Daniel M., Ma, T. P.

Journal:

IEEE Transactions on Nuclear Science

Year:

2013

Language:

english

File:

PDF, 954 KB

english, 2013

4

High-Electron-Mobility Transistors Based on InAlN/GaN Nanoribbons

Azize, Mohamed, Hsu, Allen L., Saadat, Omair I., Smith, Matthew, Gao, Xiang, Guo, Shiping, Gradecak, Silvija, Palacios, Tomás

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 290 KB

english, 2011

5

[IEEE 2012 IEEE 55th International Midwest Symposium on Circuits and Systems (MWSCAS) - Boise, ID, USA (2012.08.5-2012.08.8)] 2012 IEEE 55th International Midwest Symposium on Circuits and Systems (MWSCAS) - A new GaN HEMT nonlinear model for evaluation and design of 1–2 watt power amplifiers

Marcoux, Nick L., Fisher, Christopher J., White, Doug, Lachapelle, John, Palacios, Tomas, Saadat, Omair, Sonkusale, Sameer

Year:

2012

Language:

english

File:

PDF, 674 KB

english, 2012

6

[IEEE 2009 67th Annual Device Research Conference (DRC) - University Park, PA, USA (2009.06.22-2009.06.24)] 2009 Device Research Conference - Enhancement-mode AlGaN/GaN HEMTs with high linearity fabricated by hydrogen plasma treatment

Lu, Bin, Saadat, Omair I., Piner, Edwin L., Palacios, Tomas

Year:

2009

File:

PDF, 326 KB

2009

7

[IEEE 2014 IEEE Intersociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems (ITherm) - Orlando, FL, USA (2014.5.27-2014.5.30)] Fourteenth Intersociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems (ITherm) - Analytical thermal model for HEMTs with complex epitaxial structures

Bagnall, Kevin R., Saadat, Omair I., Palacios, Tomas, Wang, Evelyn N.

Year:

2014

Language:

english

File:

PDF, 1.01 MB

english, 2014

8

[IEEE ESSDERC 2011 - 41st European Solid State Device Research Conference - Helsinki, Finland (2011.09.12-2011.09.16)] 2011 Proceedings of the European Solid-State Device Research Conference (ESSDERC) - Low temperature gate dielectric deposition for recessed AlGaN/GaN MIS-HEMTs

Saadat, Omair I., Palacios, Tomas

Year:

2011

Language:

english

File:

PDF, 1.24 MB

english, 2011

9

Atomic layer deposition of Sc2O3 for passivating AlGaN/GaN high electron mobility transistor devices

Wang, Xinwei, Saadat, Omair I., Xi, Bin, Lou, Xiabing, Molnar, Richard J., Palacios, Tomás, Gordon, Roy G.

Journal:

Applied Physics Letters

Year:

2012

Language:

english

File:

PDF, 1.24 MB

english, 2012

10

[IEEE 2015 IEEE International Electron Devices Meeting (IEDM) - Washington, DC, USA (2015.12.7-2015.12.9)] 2015 IEEE International Electron Devices Meeting (IEDM) - Advanced power electronic devices based on Gallium Nitride (GaN)

Piedra, Daniel, Lu, Bin, Sun, Min, Zhang, Yuhao, Matioli, Elison, Gao, Feng, Chung, Jinwook Will, Saadat, Omair, Xia, Ling, Azize, Mohamed, Palacios, Tomas

Year:

2015

Language:

english

File:

PDF, 1.04 MB

english, 2015

11

Experimental Characterization of the Thermal Time Constants of GaN HEMTs Via Micro-Raman Thermometry

Bagnall, Kevin R., Saadat, Omair I., Joglekar, Sameer, Palacios, Tomas, Wang, Evelyn N.

Journal:

IEEE Transactions on Electron Devices

Year:

2017

Language:

english

File:

PDF, 1.20 MB

english, 2017

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